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IGBT
High Voltage, Low VCE(sat)
Preliminary data sheet
IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 75 A = 2.5 V = 390 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 75 45 180 ICM = 90 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
W C C C C C
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G = Gate, E = Emitter,
Features
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Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
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International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25C TJ = 125C V V A mA nA V
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BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 750 A, VCE = VGE
5 250 2 100 2.5
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AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages
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High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
(c) 2001 IXYS All rights reserved
98666A (11/01)
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IXGH 45N120 IXGT 45N120
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 33 44 220 4700 S
P
Symbol
Test Conditions
TO-247 AD Outline
gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 10V, VCE = 10V
A pF pF pF
e
VCE = 25 V, VGE = 0 V, f = 1 MHz
255 89 170
nC nC nC ns ns 800 700 ns ns
Dim.
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
28 57 55 28 370 390 14 64 32 3.0 660 740 25
25 mJ ns ns mJ ns ns mJ 0.42 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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